Asymmetric Behavior of Monolayer Hole and Preferential Nucleation of Three Dimensional Islands in GaAs Molecular Beam Epitaxy Revealed by In-situ Scanning Electron Microscopy
SEMその場観察によるGaAs MBE成長における穴の異方的挙動と三次元島の優先核形成

Katsuto TANAHASHI, Yuichi KAWAMURA, Naohisa INOUE, Yoshikazu HOMMA
1999 Hyomen Kagaku  
The behavior of monolayer holes on GaAs(UQ1) surface during post-growth annealing in molecular beam epitaxy (MBE) is examined in detail by in-situ scanning electron microscopy (SEM). Submicron scale, nearly rectangular, monolayer deep holes are formed after small islands and holes are eliminated. Their growth and shrinkage are found to
doi:10.1380/jsssj.20.543 fatcat:f4vf5ohrwndabbsr66knngvdme