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Asymmetric Behavior of Monolayer Hole and Preferential Nucleation of Three Dimensional Islands in GaAs Molecular Beam Epitaxy Revealed by In-situ Scanning Electron Microscopy
SEMその場観察によるGaAs MBE成長における穴の異方的挙動と三次元島の優先核形成
1999
Hyomen Kagaku
SEMその場観察によるGaAs MBE成長における穴の異方的挙動と三次元島の優先核形成
Preserved Fulltext
The behavior of monolayer holes on GaAs(UQ1) surface during post-growth annealing in molecular beam epitaxy (MBE) is examined in detail by in-situ scanning electron microscopy (SEM). Submicron scale, nearly rectangular, monolayer deep holes are formed after small islands and holes are eliminated. Their growth and shrinkage are found to
doi:10.1380/jsssj.20.543
fatcat:f4vf5ohrwndabbsr66knngvdme