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This paper presents a dual-mode bias modulator (BM) for complementary metal oxide semiconductor (CMOS) power amplifiers (PAs). The BM includes a hybrid buck converter and a normal buck converter for an envelope tracking (ET) mode for high output power and for an average power tracking (APT) mode for low output power, respectively. The dual-mode BM and CMOS PA are designed using a 0.18-mm CMOS process for the 1.75 GHz band. For the 16-QAM LTE signal with a peakto-average power ratio of 7.3 dBdoi:10.5573/jsts.2014.14.6.802 fatcat:lmmufixkefbsros2bpn3tarv5e