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DEVELOPMENT OF A WIDEBAND HIGHLY EFFICIENT GAN VMCD VHF/UHF POWER AMPLIFIER
2011
Progress In Electromagnetics Research C
Preserved Fulltext
A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 43 dBm output power and 63% drain efficiency has been successfully developed. The demonstrated wideband power amplifier utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifier's output power and efficiency. To assure a wideband operation, a coaxial line impedance transformer has been used as part of the input
doi:10.2528/pierc10112306
fatcat:tehcjwcumbeencxuw7usdqaium