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INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.
We have developed a self-aligned, high-yield process to fabricate current-perpendicular-to-plane giant magnetoresistance (GMR) spin-valve sensors of sub-100-nm dimensions. A pinned synthetic antiferromagnet is used as the reference layer which minimizes dipole coupling to the free layer and field-induced rotation of the reference layer. We find that the critical currents for spin-transfer-induced magnetization reversal of the free layer vary dramatically with relatively small changes in thedoi:10.1109/intmag.2005.1463502 fatcat:qbwr7zgo2zf5xo3ct2ftkecyqy