Copper electrodeposition onto zinc for the synthesis of kesterite Cu2ZnSnS4 from a Mo/Zn/Cu/Sn precursor stack

Gabriele Panzeri, Ruben Dell'Oro, Vanira Trifiletti, Jacopo Parravicini, Maurizio Acciarri, Simona Binetti, Luca Magagnin
2019 Electrochemistry communications  
A chloride-free solution based on ethylene glycol was shown to be suitable for the electrodeposition of copper onto zinc, allowing the fabrication of a Mo/Zn/Cu/Sn metallic precursor stack. The addition of diethanolamine (DEA) played an essential role in minimizing displacement reactions by shifting copper reduction towards a more negative potential. The electrochemical behavior of copper species with and without DEA was studied by cyclic voltammetry, and subsequently confirmed by displacement
more » ... ed by displacement reaction assessment (OCV and ICP-OES measurements). The metallic stack was characterized by SEM and AFM, showing the effectiveness of the copper plating solution. Reactive annealing was carried out in a tubular furnace to obtain the CZTS kesterite semiconductor, as confirmed by XRD and Raman spectroscopy. Fig. 5. CZTS film after soft and reactive annealing of the Zn/Cu/Sn stack in a sulfur atmosphere (a) Raman spectrum (b) XRD spectrum.
doi:10.1016/j.elecom.2019.106580 fatcat:dafizjo3lveznimybwrkdqrvum