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Ferroelectric Properties of Tungsten-Substituted Bi4Ti3O12Thin Film Prepared by Sol–Gel Method
2002
Japanese Journal of Applied Physics
Bi 4 Ti 3 O 12 (BIT) and tungsten-substituted Bi 4 Ti 3 O 12 (BTW) thin films were prepared on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. There are differences in the ferroelectric properties and grain strucure between BIT and BTW thin films. The crystal structure and the surface grain morphology were characterized by scanning electron microscopy and X-ray diffraction. Grains of BIT were grown with c-axis preferred orientation, while these of the BTW were randomly distributed. The
doi:10.1143/jjap.41.6451
fatcat:w6llpbyudfamfk5sl77pbzvaxi