Influence of X-Ray Irradiations on the Charge Distributions in Metal-Oxide-Silicon Structures [chapter]

E. Kooi
1967 The Surface Properties of Oxidized Silicon  
Insulated-gate silicon field-effect transistors were irradiated by X-rays. The properties of the devices altered considerably depending on the total exposure to irradiation and the gate voltage as applied during the . irradiation. The alterations can be explained by assuming that electric . currents can flow in the MOS system under these conditions. This causes • charge redistributions, which can be locked in at the moment that the irradiation is stopped. Due to these effects MOS devices may
more » ... MOS devices may offer certain possibilities for detection of ionizing radiations. .
doi:10.1007/978-3-662-40210-8_5 fatcat:ziwg4nnmlfgt3d3hkoexpccvri