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A transparent indium tin oxide (ITO) contact to bulk n-GaN and n-GaN thin film on c-face sapphire with a specific contact resistivity of 8.06×10-4 Ω.cm2 and 3.71×10-4 Ω.cm2 was measured, respectively. Our studies relied on an RF sputtering system for ITO deposition. We have investigated the formation of the ITO-based contacts on untreated and plasma treated samples. A nonlinear I-V curve was observed for ITO deposited on untreated samples. On the other hand, an I-V curve with linear behaviordoi:10.1149/2162-8777/aca432 fatcat:ggu76iiwtbdavngifjlyykuhpe