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Ultra-broadband nonlinear PHEMT modelling using TOPAS/sup TM/
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)
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This paper presents the use of a nonlinear T O P A P I model to describe the behaviour of an AlGaAsAnGaAs/GaAs PHEMT device. The extracted model features excellent agreement at DC and for small-signal excitation up to 120 GHz. The model is implemented by the IMST for Agilent EDA's Series I F and A D P circuit simulators.
doi:10.1109/edmo.2000.919035
fatcat:htmp4ehwcjdyvejraunng5stxm