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The Proceedings of Mechanical Engineering Congress Japan
CopPer electroplating is generally used to forrn micro whing in LSI fabrication ・ In recent years , to form more complicate and finer winng , it is necessary to ensure uniformity ofpIating Mrn on LSI wafer for electroplating process . The thickness of 山 e plating film is propOrtional to current density on the plated surface. Theref ( 〕re contro − ng the current density on the plated surface is necessary to ensure fine clectroplating on LSI fabrication . In this study , an el troplating ceU hasdoi:10.1299/jsmemecj.2011._j122032-1 fatcat:s2araza77bd2jnmkfw2vsw5nae