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Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 $^{\circ}\hbox{C}$
2010
IEEE Transactions on Electron Devices
We fabricated back-channel-cut and back-channelpassivated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) on clear-plastic (CP) foil substrates using a silicon nitride (SiN x ) deposition temperature of 300 • C. The TFTs were fabricated on CP and are as stable under high gate bias as TFTs made on glass substrates. A self-alignment technique was developed to align the channel passivation, the a-Si:H island, and the source/drain (S/D) terminals to the gate. Self-alignment
doi:10.1109/ted.2010.2056132
fatcat:supml4yi2radxleml3h4s4zkbq