Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 $^{\circ}\hbox{C}$

K H Cherenack, B Hekmatshoar, James C Sturm, Sigurd Wagner
2010 IEEE Transactions on Electron Devices  
We fabricated back-channel-cut and back-channelpassivated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) on clear-plastic (CP) foil substrates using a silicon nitride (SiN x ) deposition temperature of 300 • C. The TFTs were fabricated on CP and are as stable under high gate bias as TFTs made on glass substrates. A self-alignment technique was developed to align the channel passivation, the a-Si:H island, and the source/drain (S/D) terminals to the gate. Self-alignment
more » ... wed us to fabricate discrete TFTs across 7 × 7 cm 2 of a free-standing sheet of CP foil to reduce the TFT channel length L to 3 μm and reduce the S/D overlap with the gate L SD to ∼1 μm. To test the self-alignment techniques, we fabricated ring oscillators on the CP substrates. These results show that it is possible to fabricate state-of-the-art self-aligned a-Si:H TFTs and TFT circuits on plastic substrates.
doi:10.1109/ted.2010.2056132 fatcat:supml4yi2radxleml3h4s4zkbq