Er inserted Ni silicide metal source/drain for Schottky MOSFETs

Parhat Ahmet, Wataru Hosoda, Kohei Noguchi, Yoshihisa Ohishi, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai
2010 2010 International Workshop on Junction Technology Extended Abstracts  
A Schottky barrier height modulation technique for achieving a low Schottky barrier height in Ni silicide metal source/drain by Er layer insertion was reviewed. The effectiveness and possibility of the technique was demonstrated by fabricating Schottky barrier source/drain MOSFETs onto both bulk and SOI substrates.
doi:10.1109/iwjt.2010.5474989 fatcat:alyntbqvtjavdezkbjr6ybi2om