MOVPE growth and properties of [111]A−oriented piezoelectric InGaAs/GaAs/AlGaAs highly strained quantum well laser structures

Jongseok Kim, Soohaeng Cho, A Majerfeld, A Sanz, Hervás, G Patriarche, B Kim
We report the properties of InGaAs/GaAs/AlGaAs double confinement strained quantum well (QW) structures embedded in P−I−N and N−I−P device configurations grown on (111)A GaAs substrates by MOVPE for application to laser diodes exploiting the piezoelectric field. The structural and optical properties of these structures were extensively analyzed by photoluminescence spectroscopy, high resolution X−ray diffractometry and transmission electron microscopy. From these analyses, it is shown that the
more » ... is shown that the strained QWs are pseudomorphic and their interfaces have less than ± 2 monolayers of roughness. The double confinement P−I−N QW structures with high interfacial quality led to the demonstration of piezoelectric [111]A strained InGaAs QW laser diodes operating at room temperature.