Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Tian-Li Wu, Denis Marcon, Benoit Bakeroot, Brice De Jaeger, H. C. Lin, Jacopo Franco, Steve Stoffels, Marleen Van Hove, Robin Roelofs, Guido Groeseneken, Stefaan Decoutere
2015 Applied Physics Letters  
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doi:10.1063/1.4930076 fatcat:zna3jcu36bavhonlx67ac6m63u