The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Di Zhu, Jiuru Xu, Ahmed N. Noemaun, Jong Kyu Kim, E. Fred Schubert, Mary H. Crawford, Daniel D. Koleske
2009 Applied Physics Letters  
We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes ͑LEDs͒, from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers ͑QBs͒. The minimum ideality factor of 2.4 is obtained when all QBs are doped. It is shown that polarization-induced triangular band profiles of the undoped QBs are the major cause of the high ideality factors in GaInN/GaN LEDs. Numerical simulations show excellent agreement with the
more » ... easured ideality factor value and its dependence on QB doping.
doi:10.1063/1.3089687 fatcat:h54zb37fnjhhlendl7zpj3vct4