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Modeling the C-V Characteristics of Heterodimensional Schottky Contacts
2002
32nd European Solid-State Device Research Conference
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This paper addresses the capacitance-voltage (C-V) characteristics of heterodimensional Schottky diodes, in which the Schottky metal is placed in direct contact to a two-dimensional electron gas and the confined electron behavior directly dictates the device performance. We develop a novel quasi-2D model for the C-V characteristics of the device, by starting from a self-consistent solution of the Schrödinger and Poisson equations in the growth direction. The model is validated by contrasting
doi:10.1109/essderc.2002.195008
fatcat:f3nzmrb3dbhqvegc4wjvnbm6ym