Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

Muhammad A. Elmessary, Daniel Nagy, Manuel Aldegunde, Natalia Seoane, Guillermo Indalecio, Jari Lindberg, Wulf Dettmer, Djordje Peric, Antonio J. Garcia-Loureiro, Karol Kalna
2016 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)  
Email: M.A.A.Elmessary.716902@swansea.ac.uk, Phone: +44 (0) 1792 602816 10 nm) and three root mean square values (RMS=0.6, 0.7 and 0.85 nm).
doi:10.1109/ulis.2016.7440050 fatcat:5xvafclwvnbari5mz3cqyaptwq