On the variability and front-back coupling of the low-frequency noise in UTBOX SOI nMOSFETs

S. D. dos Santos, E. Simoen, V. Strobel, B. Cretu, J.-M. Routoure, R. Carin, M. Aoulaiche, M. Jurczak, J. A. Martino, C. Claeys
2012 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology  
A low-frequency (LF) noise characterization of UTBOX SOI nMOSFETs is undertaken in order to understand the variation of the electron mobility in the front-channel. It is shown that there exists a reasonable correlation between the two parameters, which can be explained by Coulomb scattering at charged traps in the front and back-gate oxide. Exceptions to the observed trend are related to the presence of excess Generation-Recombination (GR) noise, associated with deep levels in the thin Si film.
doi:10.1109/icsict.2012.6467654 fatcat:6pkxf5vymjcejkaupkeip2zpry