Results of radiation hardness tests of GaAs solid-state detectors [article]

S P Beaumont, V O'Shea, K M Smith, S D D'Auria, Ian O Skillicorn, J C Linch, R Bertin, M Edwards, C Raine, B Lisowski, M Nuti, C Del Papa (+4 others)
1990
This work has been done in the framework ofthe LAA project displacement. neutrons and gamma rays. The latter give rise mainly to ionization damage, the fomter to These two effects can be separated by irradiating samples with different radiations, namely are permanently trapped in insulating parts and at interfaces. rise to lattice defects and isolated levels in the forbidden gap, and to generation of charges which The main radiation damage to semiconductor detectors is due to displacement of
more » ... ms, that gives irradiation on several diodes, all made of S.l., undoped, LEC-grown GaAs. high rate environments. Here we present the results on the effects of gamma and neutron hardness and the potential speed, which make GaAs competitive with Si in high radiation and with full electron collection. The main attractive of these devices is the intrinsic radiation The charge collection efficiency is incomplete, due to the presence of traps, but shows a plateau Arsenide is a good material for particle detectors, with a full detection efhciency of m.i.p.s. lt is shown elsewhere in these proceedings and in [1,2,3] that Semi insulating (S.l.) Gallium
doi:10.5170/cern-1990-010-v-3.725 fatcat:dx2ngfkn2rasvibgngjkf2nyqq