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Results of radiation hardness tests of GaAs solid-state detectors
[article]
1990
This work has been done in the framework ofthe LAA project displacement. neutrons and gamma rays. The latter give rise mainly to ionization damage, the fomter to These two effects can be separated by irradiating samples with different radiations, namely are permanently trapped in insulating parts and at interfaces. rise to lattice defects and isolated levels in the forbidden gap, and to generation of charges which The main radiation damage to semiconductor detectors is due to displacement of
doi:10.5170/cern-1990-010-v-3.725
fatcat:dx2ngfkn2rasvibgngjkf2nyqq