Thermal Annealing in Hydrogen for 3-D Profile Transformation on Silicon-on-Insulator and Sidewall Roughness Reduction

M.-C.M. Lee, M.C. Wu
2006 Journal of microelectromechanical systems  
A fast, effective process using hydrogen annealing is introduced to perform profile transformation on silicon-on-insulator (SOI) and to reduce sidewall roughness on silicon surfaces. By controlling the dimensions of as-etched structures, microspheres with 1 mu m radii, submicron wires with 0.5 mu m radii, and a microdisk toroid with 0.2 mu m toroidal radius have been successfully demonstrated on SOI substrates. Utilizing this technique, we also observe the root-mean-square (rms) sidewall
more » ... ss dramatically reduced from 20 to 0.26 nm. A theoretical model is eScholarship provides open access, scholarly publishing services to the University of California and delivers a dynamic research platform to scholars worldwide. presented to analyze the profile transformation, and experimental results show this process can be engineered by several parameters including temperature, pressure, and time.
doi:10.1109/jmems.2005.859092 fatcat:6wrrln4wobd4hclrezbninbxlq