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International Electron Devices Meeting. IEDM Technical Digest
Abstrrzct-Tbe effects of temperature and current on the resistance of small geometry silicided contact structures have been characterized and modeled for the first time. Both, temperature and high current induced self heating have been shown to cause contact resistance lowering which can be significant in the performance of advanced ICS. It is demonstrated that contact-resistance sensitivity to temperature and current is controlled by the silicide thickness which influences the interface dopingdoi:10.1109/iedm.1997.649477 fatcat:xn6fk5ei4jdsjeabwkmpkmcfjm