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We present a comparative study on InGaN / GaN quantum zigzag structures embedded in p-i-n diode architecture that exhibit blue-shifting electroabsorption in the blue when an electric field is externally applied to compensate for the polarization-induced electric field across the wells. With the polarization breaking their symmetry, the same InGaN / GaN quantum structures redshift their absorption edge when the external field is applied in the same direction as the well polarization. Bothdoi:10.1063/1.2931696 fatcat:rt2ygdq7zjhatnniij7za3nu34