A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2008; you can also visit the original URL.
The file type is
on, NY 12533, USA c School of El ectri cal Engi neeri ng, Korea Uni vers i ty, Seoul , Korea 136-701 The i mpl ementati on of chal l engi ng novel materi al s and proces s techni ques has l ed to remarkabl e devi ce i mprovements i n s tate-ofthe-art hi gh-perf ormance Si Ge HBTs , ri val i ng thei r I I I -V compound s emi conductor counterparts . Verti cal s cal i ng, l ateral s cal i ng, and devi ce s tructure i nnovati on requi red to i mprove Si Ge HBTs perf ormance have benef i ted f romdoi:10.1149/1.2355832 fatcat:rj7kerjx7zgixn3avpa2opfz3i