A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is application/pdf.
TEM AND RBS STUDIES OF SINGLE AND DOUBLE DISCRETE BURIED DAMAGE LAYERS IN P+-IMPLANTED Si ON SUBSEQUENT LASER ANNEALING
[chapter]
1980
Laser and Electron Beam Processing of Materials
Preserved Fulltext
LBL-10625 This work is aimed at studying the regrowth behaviour of single and + double buried damage layers on subsequent laser annealing of P implanted Si, implanted at 120 keV to doses of 5 x 1o 14 1cm 2 and 7.5 x lo 15 tcm 2 ,
doi:10.1016/b978-0-12-746850-1.50068-2
fatcat:3c2gthhdirgjxbg75ixknvzsci