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The authors propose a methodology to improve both the deposition rate and SiH4consumption during the deposition of the amorphous silicon intrinsic layer of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate. It was found that the most important issue is to find out the saturation point of deposition rate which guarantees saturated utilization of the sourcing gas. It was also found that amorphous silicon intrinsic layers with the samekvalue will result in the same degradation ofdoi:10.1155/2013/183626 fatcat:sorhkvxl3bfmfdxgk6pze6orga