C-V test structures for metal gate CMOS

R.G. Bankras, M.P.J. Tiggelman, M. Adi Negara, G.T. Sasse, J. Schmitz
2006 2006 IEEE International Conference on Microelectronic Test Structures  
Gate leakage has complicated the layout and measurement of C-V test structures. In this paper the impact of metal gate introduction to C-V test structure design is discussed. The metal gate allows for widergate structures and for the application of n + -p + diffusion edges. We show, both theoretically and with experimental data, the impact of both design modifications on C-V measurement results.
doi:10.1109/icmts.2006.1614309 fatcat:irfpq6gdwbf5pecgooworkkyzy