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C-V test structures for metal gate CMOS
2006
2006 IEEE International Conference on Microelectronic Test Structures
Gate leakage has complicated the layout and measurement of C-V test structures. In this paper the impact of metal gate introduction to C-V test structure design is discussed. The metal gate allows for widergate structures and for the application of n + -p + diffusion edges. We show, both theoretically and with experimental data, the impact of both design modifications on C-V measurement results.
doi:10.1109/icmts.2006.1614309
fatcat:irfpq6gdwbf5pecgooworkkyzy