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Scaling Down Characteristics of Vertical Channel Phase Change Random Access Memory (VPCRAM)
2014
JSTS Journal of Semiconductor Technology and Science
In this paper, scaling down characteristics of vertical channel phase random access memory are investigated with device simulator and finite element analysis simulator. Electrical properties of select transistor are obtained by device simulator and those of phase change material are obtained by finite element analysis simulator. From the fusion of both data, scaling properties of vertical channel phase change random access memory (VPCRAM) are considered with ITRS roadmap. Simulation of set
doi:10.5573/jsts.2014.14.1.048
fatcat:z4mt42ouxfcmrk6ldtm4wv6764