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High dynamic-range CMOS image sensor cell based on self-adaptive photosensing operation
2006
IEEE Transactions on Electron Devices
This brief presents the performance characteristics of a new CMOS active pixel structure based on a self-adaptive light-sensing operation, which is implemented using a standard 0.35-µm CMOS logic process. In order to improve the dynamic range (DR) as well as the sensitivity at low illumination intensity, a new photogate structure is proposed and incorporated into the pixel structure. At an optimum bias condition of the photogate, the DR was increased by more than three times and the sensitivity
doi:10.1109/ted.2006.875805
fatcat:toxu5vhmbrgi5eufxi5uddhqzi