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Time-resolved photoluminescence decay measurements have been performed on samples with varying-sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate misorientation. Ground-state radiative recombination lifetimes from 0.8 to 5.3 ns in the incident power density range of 0.05-3400 W cm Ϫ2 at a temperature of 77 K have been obtained. It was found that a reduction of the quantum dot size led to a corresponding reduction of the radiative lifetime. The evident biexponential decaydoi:10.1063/1.1637962 fatcat:ookuuqp24jetto4jgpwjq7qazy