Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates

L. Ya. Karachinsky, S. Pellegrini, G. S. Buller, A. S. Shkolnik, N. Yu. Gordeev, V. P. Evtikhiev, V. B. Novikov
2004 Applied Physics Letters  
Time-resolved photoluminescence decay measurements have been performed on samples with varying-sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate misorientation. Ground-state radiative recombination lifetimes from 0.8 to 5.3 ns in the incident power density range of 0.05-3400 W cm Ϫ2 at a temperature of 77 K have been obtained. It was found that a reduction of the quantum dot size led to a corresponding reduction of the radiative lifetime. The evident biexponential decay
more » ... iexponential decay was obtained for the ground state emission of the quantum dot array, with the slower second component attributed to a carrier recapturing process.
doi:10.1063/1.1637962 fatcat:ookuuqp24jetto4jgpwjq7qazy