A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2022; you can also visit the original URL.
The file type is application/pdf.
Poster session
2013
71st Device Research Conference
Preserved Fulltext
III-16 Student Paper A 50 nm gate length InN tri-gate FET design with gm of 1.07 mS/µm and ft of 495 GHz
doi:10.1109/drc.2013.6633787
fatcat:v3mbdztfpvgw3it5ymx2emdxwe