Development of 1 MeV/n RFQ for Ion Beam Irradiation

Han-Sung Kim, Yong-Sub Cho, Hyeok-Jung Kwon, Young-Gi Song, Sang-Pil Yun, Lindroos, Mats (Ed.), Schaa, Volker RW (Ed.), Arduini, Gianluigi (Ed.), Pranke, Juliana (Ed.), Seidel, Mike (Ed.)
For the purpose of the ion beam irradiation, especially for helium beam application to semiconductor industry, an ion beam RFQ is under development at KOMAC (Korea Multi-purpose Accelerator Complex). The output energy of the RFQ is determined to be 1 MeV/n, which corresponds to 4 MeV in helium beam case, in consideration of the penetration depth in the silicon substrate. The RFQ is a four-vane type and will be fabricated through vacuum brazing technique. The RF power of 130 kW at 200 MHz will
more » ... W at 200 MHz will be provided to the RFQ by using a solid-state RF amplifier through two coaxial RF couplers with coaxial RF windows. The details of the RFQ development including some design features and fabrication methods will be given in this paper.
doi:10.18429/jacow-ipac2017-tupva108 fatcat:kqtwpryjvndsbaxpnbdrxrk56i