Metal-Oxide-Semiconductor Photoelectric Devices
Metal-Oxide-Semiconductor 광전소자

Kilmo Kang, Ju-Hyung Yun, Yun Chang Park, Joondong Kim
2014 Journal of the Korean Institute of Electrical and Electronic Material Engineers  
A high-responsive Schottky device has been achieved by forming a thin metal deposition on a Si substrate. Two-different metals of Ni and Ag were used as a Schottky metal contact with a thickness about 10 nm. The barrier height formation between metal and Si determines the rectifying current profiles. Ag-embedding Schottky device gave an extremely high response of 17,881 at a wavelength of 900 nm. An efficient design of Schottky device may applied for photoelectric devices, including
more » ... cluding photodetectors and solar cells.
doi:10.4313/jkem.2014.27.5.276 fatcat:vr2uxi7cvbdydac2yagsi4bcvq