Field effect transistors based on a GaN/AlGaN system have shown remarkable performance characteristics in a wide range of device applications. However, due to the large effective mass of GaN, the mobility in the channel is small. In this work, we consider a GaN/AlGaN structure with a thin InN channel of the order of a few monolayers. We find that mobility in the channel can improve considerably while breakdown characteristics are not expected to suffer. Mobilities of Ӎ2500 cm 2 ͑V s͒ Ϫ1 are

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... icted along with high sheet charges for low interface disorder. Good agreement with experimental results is observed for higher degrees of disorder within the model. At higher electric fields, we find that most electron population transfers to higher valleys or other subbands that lie in AlGaN or GaN. We also compare the low-field mobility-charge product for this structure with the conventional AlGaN/GaN structure and find that the two values are similar.