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Field effect transistors based on a GaN/AlGaN system have shown remarkable performance characteristics in a wide range of device applications. However, due to the large effective mass of GaN, the mobility in the channel is small. In this work, we consider a GaN/AlGaN structure with a thin InN channel of the order of a few monolayers. We find that mobility in the channel can improve considerably while breakdown characteristics are not expected to suffer. Mobilities of Ӎ2500 cm 2 ͑V s͒ Ϫ1 aredoi:10.1063/1.1594272 fatcat:5aa57msl4fcnjez44jjhkizeci