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Total ionizing dose effects on 4-transistor CMOS image sensor pixels

Jiaming Tan, A J P Theuwissen
2010 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)  

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Ahstract-This work presents a study on the degradation mechanism of 4T CMOS Image Sensors (CIS) induced by X-Rays irradiation. The degradation is mainly demonstrated by measurements of increased dark signal and dark random noise. The radiation affects the sensor's behavior differently for different reset voltages and transfer gate control, which is evaluated in detail. The basic failure mechanism is presented and it shows that the radiation induced increase of random telegraph signal noise and
more » ... ark random noise is mostly originated from the Si-Si02 interface trap generation. Meanwhile, the charge trapping in the shallow trench isolation oxide (STI) is responsible for the post-irradiation dark signal increase as well. It is also illustrated that the post-irradiation pinned photodiode (PPD) and the transfer gate will obviously contribute to the sensor degradation as a post-irradiation dark signal and noise source.
doi:10.1109/edssc.2010.5713738 fatcat:26yhqv3tingxbokbqokb7liplm
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Jiaming Tan, A J P Theuwissen. "Total ionizing dose effects on 4-transistor CMOS image sensor pixels." 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) (2010)