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This work presents a novel manufacturing route for obtaining high performance bendable field effect transistors (FET) by embedding silicon (Si) microwires (2.5 μm thick) in layers of solution-processed dielectric and metallic layers. The objective of this study is to explore heterogeneous integration of Si with polymers and to exploit the benefits of both microelectronics and printing technologies. Arrays of Si microwires are developed on silicon on insulator (SOI) wafers and transfer printeddoi:10.1088/0960-1317/25/12/125019 fatcat:exumsbhh3jd2hg3suhmj446f4y