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Effects of uniaxial strain on the bandstructures of silicon nanowires
2008
2008 International Conference on Electrical and Computer Engineering
The effects of uniaxial strain on the band structures of <100> silicon nanowires of width 2.75 -3.84 nm are studied using sp 3 d 5 s * orbital basis atomistic tight binding approach. The conduction band edge at Γ point has almost no variation with strain and the second valley located at 0.36×π/a of the wire Brilluoin moves down in energy with both compressive and tensile strains. The top valence band moves up in energy with both tensile and compressive strain, and therefore, the band gap
doi:10.1109/icece.2008.4769217
fatcat:yuskjjlvq5cihjadoyygv365r4