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2D-ACAR Studies on Swift Heavy Ion Si-Implanted GaAs
Material properties modification by high energy heavy ion implantation is a prospective technology leading to many device fabrications. This technique induces defects and hence the physical properties of the materials are modified. The effects of swift heavy ion implantation induced defects by 120 MeV 28+ Si ion implantation and doping in SI-GaAs are presented from the electron momentum distribution (EMD) of vacancy-type defects studied by two-dimensional angular correlation of annihilationdoi:10.1016/j.phpro.2012.06.029 fatcat:g23jdpl54rhxrnvgs7avudybpi