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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
Applied Physics Letters
High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process Appl. Phys. Lett. 100, 213108 (2012) Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1−xN thin films J. Appl. Phys. 111, 093527 (2012) Low temperature dielectric dispersion and relaxor like behavior in multiferroic Ba3NbFe3Si2O14 J. Appl. Phys. 111, 074103 (2012) Strain effect on the surface potential and nanoscale switchingdoi:10.1063/1.126214 fatcat:acw4hyc3vbcjncvakymqjrh4au