Heat Transport and Temperature Gradient in Silicon-on-Insulator Wafer during Flash Lamp Annealing Process

Hitoshi Habuka, Yu Kasahara, Akiko Hara
2008 Japanese Journal of Applied Physics  
Temperature gradient formed in a silicon-on-insulator (SOI) wafer during a flash lamp annealing (FLA) process is calculated on the basis of the heat transport theory. The temperature of SOI wafer, having a 40 nm-thick active layer and a 100 nm-thick buried oxide (BOX) layer, is calculated. Within 1 ms, the active layer surface reaches the maximum temperature higher than 1473 K. Because the most amount of heat is transported by heat conduction, very large temperature gradient, such as 3 x 10 7
more » ... m, is formed in the BOX layer because of its very small heat conductivity.
doi:10.1143/jjap.47.6277 fatcat:fppkydayzbgwvnnl7k75qz7cwe