Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2thin films on silicon

J. F. Conley, P. M. Lenahan
1993 Applied Physics Letters  
Exposing thin films of amorphous SiOZ to molecular hydrogen at room temperature converts some silicon dangling bond defects, E' centers, into two hydrogen coupled complexes. These reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/ silicon devices. -.~ -----Appl.
doi:10.1063/1.108812 fatcat:jlqfrthql5amthf4kg67tvygj4