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Exposing thin films of amorphous SiOZ to molecular hydrogen at room temperature converts some silicon dangling bond defects, E' centers, into two hydrogen coupled complexes. These reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/ silicon devices. -.~ -----Appl.doi:10.1063/1.108812 fatcat:jlqfrthql5amthf4kg67tvygj4