Electron beam exposure Characteristic of negative electron beam resist (HSQ)
ネガ型電子ビームレジスト(HSQ)の電子ビーム露光特性

Eiki Yamauchi, jyun Taniguchi, iwao Miyamoto, susumu Ono
2006
HSQ , , ( ) Electron beam exposure characteristic of negative electron beam resist (HSQ) Tokyo University of Science Eiki Yamauci, Jun Taniguchi, Iwao Miyamoto ELIONIX Susumu Ono Hydrogen Silsesquioxane (HSQ) was used as the negative electron beam (EB) resist. Tetramethyl ammonium hydroxide (TMAH) was used as developer. The characteristics of the developed height by changing exposure condition (accelerating voltage and dose) and development condition were examined. When the high concentration of TMAH was used as a developer,
doi:10.11522/pscjspe.2006s.0.323.0 fatcat:73dj4u5rmrhkhgoesrwgdhvre4