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Low-Loss Differential Semicoaxial Interconnects in CMOS Process
2006
IEEE transactions on microwave theory and techniques
Design, characterization, and modeling of differential semicoaxial interconnects based on a standard 0.18-m CMOS process are presented for the first time. The differential semicoaxial line shows a low differential-mode attenuation constant of 1.00 dB/mm at 50 GHz and a slow-wave factor above 3.1 over a wide frequency range. The characteristics of differential semicoaxial lines for differential mode, common mode, slow-wave effect, and coupling effect are also investigated in details based on the
doi:10.1109/tmtt.2006.886000
fatcat:3xv77kbsxfeexha4qh7kfnxy3y