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Scanning tunneling microscopy images of III–V semiconductor alloys: Strain effects

H. A. McKay, Huajie Chen, Randall Feenstra, P. J. Poole
2018

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Scanning tunneling microscope images of lattice-matched InGaAs/InP structures were investigated using autocorrelation analysis. Correlation lengths and correlation amplitudes were calculated from constant–current empty-state images. Theoretical STM images were calculated from a model which only considered surface displacements due to strain relaxation. By comparing model and experimental correlation lengths and amplitudes it is concluded that contrast variations in constant–current images are
more » ... minated by strain relaxation effects. Changes in probe tip geometry and applications of this technique to study clustering in III–V alloys are also discussed.
doi:10.1184/r1/6508022.v1 fatcat:2irn5zmdejgl5bnrag7g3fmr5a
Citation

H. A. McKay, Huajie Chen, Randall Feenstra, P. J. Poole. "Scanning tunneling microscopy images of III–V semiconductor alloys: Strain effects." (2018)