Measured Effectiveness of Deep N-well Substrate Isolation in a 65nm Pixel Readout Chip Prototype [article]

Peilian Liu, Maurice Garcia-Sciveres, Timon Heim, Amanda Krieger, Dario Gnani
2020 arXiv   pre-print
The same charge sensitive preamplifier and discriminator circuit with different isolation strategies has been tested to compare the isolation of both analog and digital circuits from the substrate of a 65nm bulk CMOS process to the isolation of only digital circuits, tying analog ground locally to the substrate. This study will show that the circuit with analog on the substrate and digital in deep N-well has better noise isolation between analog and digital.
arXiv:1908.06182v3 fatcat:accso6quf5epxeeulawgphtob4