Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces

S. Catalano, M. Gibert, V. Bisogni, F. He, R. Sutarto, M. Viret, P. Zubko, R. Scherwitzl, G. A. Sawatzky, T. Schmitt, J.-M. Triscone
2015 APL Materials  
Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis display a 1st order metal to insulator transition (MIT) together with a N\'eel transition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pc NdGaO_3 the MIT occurs at T=335K and the N\'eel transition at T=230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized
more » ... n (111)_pc surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.
doi:10.1063/1.4919803 fatcat:b5bdkldx7vaflalx64wxiuviue