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Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces
2015
APL Materials
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Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis display a 1st order metal to insulator transition (MIT) together with a N\'eel transition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pc NdGaO_3 the MIT occurs at T=335K and the N\'eel transition at T=230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized
doi:10.1063/1.4919803
fatcat:b5bdkldx7vaflalx64wxiuviue