10×10 15 , 15×10 15 , 20×10 15 i 30×10 15 jona/cm 2 . Energija je odabrana tako da efekti jonske implantacije budu najizraženiji na granici tanak sloj (Co) . / . podloga iii (Si). Deponovani i odabrani implantirani slojevi (20×10 15 Xe/cm 2 ) su zatim odgrijavani u vakuumskoj peći na 200, 300, 400, 500, 600 i 700 . ºC, u trajanju od 2 . h. Dobijene vrijednosti brzine atomskog miješanja su pokazale da struktura podloge ima veliki uticaj na proces atomskog transporta indukovanog jonskim

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... njem. Naime, u slučaju amorfizovane podloge brzina miješanja atoma Co i Si na Co/Si granici je skoro za red veličine manja nego u slučaju kristalnog Si. Pretpostavlja se da je ovo rezultat formiranja velike količine defekata, koji se u toku bombardovanja Ar + jonima stvaraju u neposrednoj blizini površine Si podloge i predstavljaju barijeru za kretanje atoma sa jedne na drugu stranu međupovršine. Slaba pokretljivost ovih defekata onemogućuje i termički aktiviranu difuziju, pa se ni kod najviše temperature odgrijavanja ne uočava formiranje silicida. Kod ozračenih uzoraka, nezavisno od toga da li se radi o kristalnoj ili amorfizovanoj podlozi, uočeno je slično ponašanje: do temperature odgrijavanja od 400 . ºC slabo izražena difuzija potiče od efekata indukovanih jonskim zračenjem, a na temperaturama od 500 . -. 700 . ºC termalno miješanje postaje dominantan proces i postižu se uslovi za formiranje jedinjenja. Na temperaturi od 500 . ºC dominantna faza je CoSi, a na temperaturama . ≥ . 600 . ºC dolazi do formiranja čiste CoSi 2 faze. Ključne riječi: jonska implantacija, tanki slojevi CrN, silicidi, IBM tehnika, TEM analiza, IR spektrofotometrija, XRD, RBS Naučna oblast: prirodno-matematička Uža naučna oblast: fizika UDK 539.1 iv Abstract Thin film structures own significantly different properties than the bulk material and consequently they found applications in various fields of modern nanotechnology. In the past few decades, special attention was paid to research in the field of ion beams modification of thin films. Among the techniques ion implantation is particularly emphasized, as a method that allows the incorporation of impurity atoms in the material with the possibility of precise control of process parameters. As non-equilibrium technique (not controlled by diffusion laws), ion implantation enables production of a new materials, that can not be produced with other conventional methods. The main objective of this research was to gain new fundamental knowledge in the field of modification of thin film . / . Si systems induced by ion irradiation. The present work consists of two parts. In the first part of the experiment the changes induced by ion implantation inside of the thin layer were examined -effects of different ionic species on the microstructure, optical and electrical properties of chromium nitride (CrN) were investigated. The second part of the experiment refers to the examination of changes at the thin film . / . substrate interface due to ion implantation -the influence of ion bombardment on the ion beam mixing of Co/Si system was investigated as well as formation of cobalt-silicides during the process of ion irradiation and . / . or annealing of the samples. Rutherford backscattering spectrometry (RBS) was used to obtain concentration depth profiles of elements and to determine the stoichiometry of the layers. Structural and phase analyses of the systems were performed by X-ray diffraction (XRD), transmission electron microscopy combined with selected area diffraction (TEM . / . SAD) and high-resolution electron microscopy analysis together with SADRŽAJ Rezime i Abstract iv Simboli i skraćenice vii