Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films

Zhou Xiaowei, Li Peixian, Xu Shengrui, Hao Yue
2009 Journal of Semiconductors  
The growth of high-performance Mg-doped p-type Al x Ga 1−x N (x = 0.2) using metal-organic chemical vapor deposition is reported. The influence of growth conditions (growth temperature, magnesium flow, and thermal annealing temperature) on the electrical properties of Mg-doped p-type Al x Ga 1−x N (x = 0.2) has been investigated. Using the optimized conditions, we obtained a minimum p-type resistivity of 0.71 Ω·cm for p-type AlGaN with 20% Al fraction.
doi:10.1088/1674-4926/30/4/043002 fatcat:eeradxzhyvejxn7z2c63arojnm