Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

M. R. Holzworth, N. G. Rudawski, S. J. Pearton, K. S. Jones, L. Lu, T. S. Kang, F. Ren, J. W. Johnson
2011 Applied Physics Letters  
A subnanometer thick interfacial oxide layer present between the Ni/Au gate metal stack and semiconducting epilayers of an AlGaN/GaN high electron mobility transistor was characterized using high-angle annular dark-field scanning transmission electron microscopy and laser-assisted atom probe tomography. It was revealed that the oxide is composed of distinct Ni-oxide-rich and Al-oxide-rich layers with no Ga-oxide detected. The results provide information that is of potential importance in
more » ... mportance in determining failure mechanisms and improving reliability of AlGaN/GaN high electron mobility transistors.
doi:10.1063/1.3569715 fatcat:hchd6uefgrhqhca2of7mgaf4ka