Impact of Low-Dose Electron Irradiation on the Charge Collection of n+p Silicon Strip Sensors

Robert Klanner
2015 Proceedings of Technology and Instrumentation in Particle Physics 2014 — PoS(TIPP2014)   unpublished
The response of n + p silicon strip sensors to electrons from a 90 Sr source was measured using the ALiBaVa read-out system. The measurements were performed over a period of several weeks, during which several operating conditions were varied. The sensors were fabricated by Hamamatsu on 200 µm thick float-zone and magnetic-Czochralski silicon. Their pitch is 80 µm, and both p-stop and p-spray isolation of the p + strips were studied. The electrons from the 90 Sr source were collimated to a spot
more » ... with a full-width-at-half maximum of 2 mm at the sensor surface, and the dose rate in the SiO 2 at the maximum was about 0.6 mGy/s. The dose in the SiO 2 at the end of the measurements was about 500 Gy. Significant changes in the charge collection and charge sharing were observed as function of 90 Sr irradiation dose. Annealing studies, with temperatures up to 80 • C and annealing times of 18 hours, show that the changes can only be partially annealed. The observations are qualitatively explained with the help of TCAD simulations in which the effects of radiation damage in SiO 2 have been included. The relevance of the measurements for the design and use of p + n strip sensors in different radiation environments is discussed.
doi:10.22323/1.213.0040 fatcat:7knk7hzt3fdgtkgufrcfmiis4u