FLAT-BAND VOLTAGE CONTROL OF GaAs SIS DIODE USING PSEUDOMORPHICALLY GROWN InGaAs GATE

T. KINOSADA, K. MATSUMOTO, Y. HAYASHI, N. HASHIZUME
1987 Le Journal de Physique Colloques  
E l e c t r o t e c h n i c a l L a b o r a t o r y M i t i Japan, 1-l-42Umezono, Sakura-mura, N i i h a r i -g u n , I b a r a k i , 3 0 5 , Japan "central ~e s e a r c h L a b o r a t o r i e s , S h a r p C o r p o r a t i o n , 2613-1, Ichinomoto-cho, T e n r i -s h i , N a r a 6 3 2 , Japan Abstract We propose a method f o r c o n t r o l l i n g t h e f l a t -b a n d v o l t a g e of a GaAs S I S (Semiconductor-Insulator-Semiconductor) diode i n which we use InGaAs a s t h e g a t e
more » ... t h e g a t e material. W e examine i t s e f f e c t i v e n e s s by capacitance-voltage measurement. Thermal s t a b i l i t y of InGaAs-gate SIS diode i s a l s o studied.
doi:10.1051/jphyscol:1987562 fatcat:6fryjfn5ojci3m6vis6ucpmode